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| www..com Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS(ON) ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. *Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings -30 20 -4.1 -3.5 -20 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ : : Unit : /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. G3407 Page: 1/4 CORPORATION Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) ISSUED DATE :2007/01/15 REVISED DATE : Symbol BVDSS VGS(th) gfs IGSS IDSS Min. -30 -1.0 - Typ. 8.2 7 3.1 3 8.6 5 28.2 13.5 700 120 75 10 Max. -3.0 100 -1 -5 52 87 840 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VGS= 20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-4.1A VGS=-4.5V, ID=-3.0A ID=-4A VDS=-15V VGS=-4.5V VDS=-15V VGS=-10V RG=3 RL=3.6 VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Symbol VSD nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 2 Min. - Typ. 27 15 - Max. -1.0 -2.2 Unit V ns nC A Test Conditions IS=-1.0A, VGS=0V IS=-4A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=-1.0V Reverse Recovery Time Trr Qrr IS Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. 2 G3407 Page: 2/4 CORPORATION Characteristics Curve ISSUED DATE :2007/01/15 REVISED DATE : Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 4. On-Resistance v.s. Junction Temperature Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics G3407 Page: 3/4 CORPORATION ISSUED DATE :2007/01/15 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G3407 Page: 4/4 |
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